Gate-Bias Induced R<sub>ON</sub> Instability in p-GaN Power HEMTs
نویسندگان
چکیده
In this letter, we investigate the on-resistance ( R ON ) instability in p-GaN power HEMTs induced by a positive or negative gate bias xmlns:xlink="http://www.w3.org/1999/xlink">V xmlns:xlink="http://www.w3.org/1999/xlink">GB ), following application of quasi-static initialization voltage xmlns:xlink="http://www.w3.org/1999/xlink">GP opposite sign. The transient behavior was characterized at different temperatures 90–135 °C range. By monitoring resulting drain current transients, activation energy as well time constants processes are characterized. Not trivially, both increase/decrease were found to be thermally activated and with same energy. We attribute thermal charging/discharging hole traps present AlGaN barrier region below gate.
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2023
ISSN: ['1558-0563', '0741-3106']
DOI: https://doi.org/10.1109/led.2023.3265503